Room-temperature spin injection from Fe into GaAs.
نویسندگان
چکیده
Injection of spin polarized electrons from a metal into a semiconductor is demonstrated for a GaAs/(In,Ga)As light emitting diode covered with Fe. The circular polarization degree of the observed electroluminescence reveals a spin injection efficiency of 2%. The underlying injection mechanism is explained in terms of a tunneling process.
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ورودعنوان ژورنال:
- Physical review letters
دوره 87 1 شماره
صفحات -
تاریخ انتشار 2001